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According to Ai Siqiang, the Cambridge 6x2 inch CCS system will be configured to handle a 6-inch (150 mm) wafer, enabling the growth of gallium nitride epitaxial on a 6-inch silicon wafer, continuing to advance Cambridge University's LED and R&D and practice in electronic equipment.
Tony Pearce, general manager of Ai Siqiang, said: "Ai Siqiang has been working with Cambridge University for a long time. Before that, Cambridge University ordered us a set of reactors. This time, we have purchased another CCS study. The system, which is also very proud of us. The Cambridge University research team has successfully developed a world-leading silicon-based GaN production process, and we look forward to seeing this new system to help their research and development work."
The University of Cambridge's GaN Center not only has nitride semiconductor production capacity, but also is one of the few advanced characterization facilities in the world with electron microscopes, X-ray diffractometers, atomic force microscopes, photoluminescence (PL) and Hall effect devices. Research center. 
Aixtron Co., Ltd. (Aixtron) has announced that it has successfully completed the commissioning of another multi-wafer near-coupling sprinkler head (CCS) MOCVD reactor in a new facility at the Department of Materials Science and Metallurgy.