Hynix first mass production of DRAM products using 30nm process

It is understood that Hynix announced on the 29th that it has developed two computer DRAM products and will first adopt a 30-nanometer production process. According to Hynix, it is planned to use 38-nanometer process to produce 4Gb and 2Gb products. In the first quarter of 2011, it will first mass-produce 2Gb products.

Compared to the 40-nm process, the number of semiconductors that can be produced on a 30-nanometer process using a single wafer increases by 60 to 70%. Not only improve the productivity, but also help improve cost competitiveness. Hynix's 38-nanometer manufacturing process increases DRAM production by about 70% over the current 44-nanometer manufacturing process.

Hynix stated that the processing speed of product data produced using a 38-nanometer process can be increased to 2,133 Mbps, which is approximately 60% faster than the 44-nanometer process product data transmission speed. In addition, about 50% of the power consumption of 44-nanometer process products is reduced.

Hyunsu Park, vice president of Hynix, said that currently, 2Gb DRAM products account for 50% of the total volume. In the future, the proportion of high-capacity, high-performance and low-power consumption products will be expanded, and it is expected to lead the market for high-capacity products such as 4Gb.