CGD15HB62P: 2 output channels; isolated power supply; direct mounted low inductance design; short circuit protection Undervoltage protection CGD15HB62P reference design application circuit: Figure 1CGD15HB62P internal structure diagram The user can control the gate turn ON and OFF speed by changing Rg to a lower value and gain better efficiency. The user can also control the Gate turn-ON and OFF speed Independent by populating Rg.off and D1. Figure 2CGD15HB62P reference design Four (4) mounting holes for 4x M4-8, Nylon screws are provided to secure the board to a bracket or enclosure (0.5 Nm) for additional support. CGD15HB62P Chinese data sheet: Click to download More schematics and source code popular application circuit: click now 12.6v Charger,12.6v Charger,AC DC 12.6V Charger,12.6v charger adapter,Li-ion 12.6v charger ShenZhen Yinghuiyuan Electronics Co.,Ltd , https://www.yhypoweradapter.com
The CGD15HB62P dual SiC MOSFET driver is an isolated half-bridge gate driver optimized for SiC. This article mainly introduces the CGD15HB62P features, application range, reference design circuit and circuit analysis to help you shorten the design time.