TE's new SESD devices address complex ESD and surge protection challenges

ESD electrostatic protection tube 5V two-way 0201

Design engineers are well aware that providing ESD protection in accordance with IEC61000-4-2 may not be sufficient when dealing with the more severe damage caused by charged boardevent (CBE). These extremely high surge events have high peak current and fast rise time characteristics that can damage I/O ports on smartphones, tablets, car infotainment devices and other sensitive electronics. Recognizing this fact, TE Connectivity's circuit protection business unit has introduced a new family of silicon ESD ( S ESD ) devices with air discharge ratings of ±20kV and ±22kV, much higher than IEC8kV contact discharge and 15kV Air discharge standard requirements can help designers solve common circuit protection challenges caused by CBE events.

Nicole Palma, Product Manager, TE Circuit Protection, said: "When working with design engineers, we found that the IEC ESD protection standard did not really solve the CBE problem that could lead to product failure. For this challenge, we have upgraded the existing small low capacitance. The SESD device product line offers surge protection of 20kV and higher. This more powerful protection capability can help manufacturers improve product reliability and minimize fieldreturn, which is extremely competitive. Key design considerations for the computer, mobile, consumer and automotive markets."

This next-generation SESD product is available in both unidirectional and bidirectional configurations, as well as 1, 2 and 4 channel devices in micro-sized 0201 and 0402 size and standard flow-through packages. In addition to providing 20kV contact discharge performance, the surge protection capabilities of these devices (2.2A for 4-channel arrays and 2.5A for 1- and 2-channel devices) help provide more robust performance.

The typical input capacitance of SESD devices is 0.15pF (bidirectional) and 0.30pF (unidirectional) in the high frequency spectrum to help meet HDMI, eSATA and other high speed signal requirements. Their low clamping voltage (<15V) helps achieve fast start-up times and minimizes energy flow-through. In addition, SESD devices have extremely low leakage currents (50nA) to help reduce power consumption in applications where energy must be saved.

model:

Single channel:

· SESD0201X1UN-0030-088 - one-way; 0201 size; 0.30pF (typical) input Cp; 8.8V (typical) VBR

·SESD0201X1BN-0015-096–bidirectional; 0201 size; 0.15pF (typical) input Cp, 9.6V (typical) VBR

· SESD0402X1UN-0030-088 - one-way; 0402 size; 0.30pF (typical) input Cp, 8.8V (typical) VBR

·SESD0402X1BN-0015-096–bidirectional; 0402 size; 0.15pF (typical) input Cp, 9.6V (typical) VBR

multi-channel:

· SESD0402Q2UG-0030-088 - one-way; 0402 size; 0.30pF (typical) input Cp, 8.8V (typical) VBR

· SESD1004Q4UG-0030-088 - one-way; 1004 size; 0.30pF (typical) input Cp, 8.8V (typical) VBR