The new linear accelerator flagship product is designed to provide higher-quality radiotherapy for more patients and more types of cancer. Atlanta and Stockholm, March 2013 / PRNewswire / -Elekta launched Versa HD ™ at a global live event. This is an advanced linear accelerator system designed to improve patient treatment and treat more types of cancer diseases. Versa HD has high-precision beam and tumor-directed therapy, which can shorten the treatment time and maximize health resources. Versatile performance provides better treatment for more patients Versa HD can not only allow clinicians to flexibly carry out routine treatment of a variety of tumors in the human body, but also provide high-precision targeted treatment of complex tumors. As an integrated treatment system, the versatility of Versa HD can meet today's increasingly severe challenges from cancer management needs. Tomas Puusepp, President and CEO of Elekta, said: "The determination to benefit more and more cancer patients worldwide has prompted us to develop the Versa HD. We strive to integrate multiple technologies that can bring immediate benefits to patients' health and quality of life. As a pioneer in providing many of the most advanced radiotherapy technologies in the world today, we are proud to launch another market-leading innovative product, Versa HD. Versa HD is the spark of thought for Elekta technical experts and our clinical partners A true portrayal of perfect combination. " Versa HD has been integrated with Elekta ’s recently launched Agility ™ 160-leaf multi-leaf collimator (MLC) to provide high-precision beams, which is the key to maximizing the dose at the tumor target and protecting surrounding healthy tissues. It is very important that this kind of high-precision targeted therapy can also be realized in a large irradiation field, so that it can perform targeted and precise treatment of various complex tumors. In the past, due to technical limitations, high-precision beams were only used for targeted therapy of Ono tumors. Agility-integrated Versa HD breaks through this problem, allowing clinicians to provide high-precision beams for both Ono and Ono tumors. Unprecedented combination of high-dose-rate therapy and high-speed multi-leaf collimator Compared with the previous generation Elekta linear accelerator, the Versa HD can increase the radiation dose by three times with the rapid movement of the blades of its ultra-high-speed multi-leaf collimator Agility. With this breakthrough technology fusion, clinicians can now fully utilize high-dose-rate technology for treatment for the first time, which can make a variety of advanced treatments more powerful and effective, including stereotactic radiosurgery (SRS), stereotactic radiotherapy ( SRT) and volume rotation intensity modulated radiation therapy. Kevin Brown, vice president of global scientific research at Elekta, said: "In the past, the blade speed of the multi-leaf collimator has restricted doctors from adopting high-dose rate treatment techniques. Due to the increased dose rate, the speed of blade movement is often insufficient to provide high standards of dose regulation. However, Now with Versa HD, clinicians can take full advantage of high-dose-rate treatment technology and provide tumors with high-precision, high-conformity doses to achieve better results. " To reduce environmental impact and operating costs, Versa HD consumes 30% less electricity than other treatment systems. Versa HD also conforms to modern ergonomics, and it includes a softer design that the patient feels more intimate, a new user control interface, and a more comfortable lighting system. Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors. P Channel Mosfet,P Channel Power Mosfet,Field Effect Transistor,Field Effect Transistor Symbol Dongguan Agertech Technology Co., Ltd. , https://www.agertechcomponents.com